Quantitative analysis of backscattered electron (BSE) contrast using low voltage scanning electron microscopy (LVSEM) and its application to Al0.22Ga0.78N/GaN layers

  1. Garitagoitia Cid, A.
  2. Rosenkranz, R.
  3. Löffler, M.
  4. Clausner, A.
  5. Standke, Y.
  6. Zschech, E.
Revue:
Ultramicroscopy

ISSN: 1879-2723,  0304-3991

Année de publication: 2018

Volumen: 195

Pages: 47-52

Type: Article

DOI: 10.1016/J.ULTRAMIC.2018.08.026 GOOGLE SCHOLAR

Objectifs de Développement Durable

La source de données: Scopus